CoolGaN™ Integrated Power Stage (IPS) 600V

Infineon’s CoolGaN™ Integrated Power Stage (IPS) leverages the markets most reliable GaN and driver technology, uniting ultimate efficiency and reliability with ease-of-use. CoolGaN™ IPS is pairing the CoolGaN™ normally-off enhancement mode GaN switches with dedicated integrated EiceDRIVER™ gate driver into thermally enhanced QFN packages. This integration allows designers to save more PCB space, on top of passive components size reduction, to achieve a smaller form factor design in a shorter time.

The CoolGaN™ IPS  600V family today, includes various configurations such as half-bridge utilizing two CoolGaN™ GaN transistors and EiceDRIVER™ driver packaged in a 8x8mm QFN-28 or 6x8mm QFN-26, as well as single-channel with EiceDRIVER™ driver configuration in a compact 8x8mm QFN-21 package.

Breakthrough in power density

CoolGaN™ has an advanced breakdown field of 10x and an electron mobility of 2x higher compared to silicon devices. The key for the high frequency operation capability of CoolGaN™ lies in a 10x lower output- and gate charge, compared to silicon-based devices and a reverse recovery charge of virtually zero.

Target applications

The faster switching capability of CoolGaN™ and the ease-of-use thanks to integration, brings ultimate efficiency and reliability to switch mode power supply applications such as USB-PD chargers and adapters, wall plugs and ultrathin TV power supply.

The technology behind

CoolGaN™ IPS is the evolution and next step of Infineon’s discrete CoolGaN™ technology. Infineon brought the GaN e-mode concept to maturity with end-to-end production in high volumes. The pioneering quality ensures the highest standards and offers the most reliable and performing solution among all GaN HEMTs on the market.

Learn more about Infineon’s CoolGaN™ Technology

Advantages of CoolGaN™ IPS in charger/adapter applications

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